Optek / TT Electronics
EMITTER IR 890NM 100MA TO-46
SLOTTED OPTICAL SWITCH PHOTOLOGIC
Lumex Opto
Cooled PbS 3x3 Detector
PHOTOTRANSISTOR LATERAL DARK PACKAGE
OSRAM Opto
Opto SFH2505 IR Si Photodiode, 15 deg, Through Hole 5mm package
Opto SFH 325 FA-3/4 SIDELED 120 deg IR Phototransistor, Smnt 2-Pin PLCC package
Phototrans. array, 8 elem, +/-18deg, BPX 88
Excelitas Tech
Pyroelectric Infrated Detectors - Dual Element Detectors
Siliconix / Vishay
TSHG6200 IR LED, 850nm, T-1 3/4 (5mm) Through Hole package
PHOTOLOGIC LATERAL,
TO-46GAALAS IFRARED EMITTING DIODE
Opto SFH 3010 160 deg IR + Visible Light Phototransistor, Surface Mount 2-Pin
SIX ELEMENT SMD PHOTODIODE ARRAY ON TAPE,
Luna Optoelectronics
PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)
Carlo Gavazzi
DUP PIR DETECTOR WALL OPUS
Opto SFH 313 FA-3/4 20 IR Phototransistor, Through Hole 2-Pin 5mm(T-1 3/4)package
ULTRAVIOLET METAL CAN LED - 385NM
SFH3410 human eye char phototransistor
PIN PHOTODIODE LOW PROFILE ST,
ULTRAVIOLET METAL CAN LED - 395NM
AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 570NM 2-PIN T-1 3/4
Phototransistor; NPN; 5.0 V (Min.); 6.0mA (Typ.) (Collector); 75 mW; -20 degC
PHOTODARL SILICON NPN SIDE LOOK
TO-18NPN SILICON PHOTO TRANSISTOR
HONEYWELL
Diode, Infrared Emitter; TO-46; 935 nm; 1.7 V; 100 mA; -55 degC; 125 degC; 150
PHOTOLOGIC TO-18,
Reflective Sensor, Transistor Output, Metal Can, Blk, Darlington Output
ULTRAVIOLET METAL CAN LED - 405NM
LEDPOINT SOURCEEND LOOKER FLAT
SMART-DUPLINE 55X55 PIR DETECTOR 90°+LUX REV.2
PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46
INFRARED PHOTOTRANSISTOR ; 0805 PKG, WATER CLEAR LENS, FLAT
PHOTOTRNS NPN PLASTIC SIDE LOOK
TEMD5010X01 IR + Visible Light Si Photodiode, 65 deg, SMD
Silicon Photodiode; clear; T-1 3 #4 flat package; Integral IR rejection filter
DIP2 120deg Si PIN photodiode, BPW34FA
Sensor, Phototransistor Detector, Silicon, Surface Mount Pkg, Glass Lens
PHOTOTRANS. W/BASE-EMITTER RES.
Photodiode, Hermetic Packaging
Infrared Emitter, GaAs Diode, 890 nm, 210.0 mW/cm2, T-1 3/4
Opto SFH 3401 120 deg IR + Visible Light Phototransistor, Smnt 3-Pin DIP package
PHOTO TRANSISTOR FLAT LENS
SMT refl Sensor LED Emit+Phototrans, 9201
To-5 Photocells Plastic Encapsulated
Opto SFH 305-2/3 32 deg IR + Visible Light Phototransistor, Through Hole 2-Pin
PHOTO TRANSISTOR PLASTIC TO-18
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
VISHAY
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV