HONEYWELL
Diode, Infrared Emitter, Side-Emitting, Plast Pkg, 50 Degree, 20mA Forward Cur.
Carlo Gavazzi
SMART-DUPLINE PIR DETECTOR 90° LIGHT REV.3
Lumex Opto
Ambient PbSe 2x2 Detector
Luna Optoelectronics
ELECTRONIC PART
Pepperl + Fuchs
PosiTrack System (WCS)
Optek / TT Electronics
PHOTOTRANS SILICON NPN SIDE LOOK
Sensor; Infrared; Emitting Diode; Side-Looking Plastic Pkg; 20mA Forward Current
OSRAM Opto
SFH 3204 SIDELED 120 IR+Visible Light Phototransistor, Smnt 2-Pin PLCC package
Phototransistor, 5mm, SFH 300
EMITTER IR 890NM 100MA RADIAL
SD2440-003 48 deg Phototransistor, Panel Mount 2-Pin Pill package
SFH 325-3/4 SIDELED 120 IR+Visible Light Phototransistor, Smnt 2-Pin PLCC package
PILLNPN SILICON PHOTO TRANSISTOR
Excelitas Tech
Photoconductive Cell; 16 Kilohms (Typ.); 500 Kilohms (Min.); 0.75 (Typ.)
Opto BPX48 IR + Visible Light Si Photodiode, 60 deg, Through-hole DIP
PHOTODIODE PIN 935NM SIDELOOK
Opto SFH 314 FA 80 deg IR Phototransistor, Thru Hole 2-Pin 5mm(T-1 3/4)package
DigiPyro; Dual-Element Pyroelectric Detector; TO5 housing - for motion sensing
Infrared Emitting Diodes, 880nm, 200mW, 1.5V
Advanced Sensors
Sensor; ZTP-101T Infrared Sensor; Thermopile; IR Sensor
Opto SFH 3600-3/4 MIDLED 40 deg IR + Visible Light Phototransistor, Smnt 2-Pin
VISHAY
DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
SLOTTED OPTICAL SWITCH PHOTOLOGIC
PHOTODARLINGTON NPN 935NM SIDELK
Siliconix / Vishay
EMITTER IR 890NM 50MA RADIAL
SENS OPTO SLOT 3.18MM TRANS C-MT
SMART-DUPLINE INDOOR PIR SENSOR+LUX REV.2
PHOTOLOGIC SLOTTED OPTICAL SWITCH
PHOTOLOGIC LATERAL,
EMITTER IR 935NM 50MA RADIAL
HI POWER OUTHI SPEEDTO-46 FLAT LENS
WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, SMD PACKAGES
PhotoDiode; Side-Looking Plastic; PN; 50 deg; 4 muA (Min.); 50 nA; 100 mW; -40
Photodiode, Silicon Pin; 60 muA (Typ.); 390 mV (Typ.); 2 nA (Typ.); -55 degC
Sensor, Infrared Emitting Diode, AIGaAs, Tape & Reel, Inverted
PHOTOTRANS. W/BASE-EMITTER RES.
Opto SFH 303 FA 40 deg IR Phototransistor, Thru Hole 3-Pin 5mm(T-1 3/4)package
PHOTODIODE QUAD HIGH TEMP SMD
SENS OPTO SLOT 3.18MM TRANS THRU
Infrared Emitter, GaAs Diode, 890 nm, 3.5 nW/cm2, Miniature "Pill" Pak
Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60
NTE ELECTRONICS
NTE Electronics, Inc.
PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)
Integrated Detector
PHOTO TRANSISTOR FLAT LENS
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV