HONEYWELL
Detector; T-1; NPN; 20 deg; 15 V; 1.1 V; 0.5 mA (Min.); 250 nA; 70 mW; -40 deg
Siliconix / Vishay
TEKT5400S +/-37deg Day Light Phototransistor, Thru Hole 2-Pin Side Looker package
OSRAM Opto
Phototransistor, 2 Elements, 18deg, BPX82
Selco
PHOTOCELL, CDS, .2X.169IN.
Optek / TT Electronics
EMITTER IR 890NM 50MA RADIAL
3 CHANNEL OPTICAL COMPARATOR,
Opto SFH 206 K IR + Visible Light Si Photodiode, 60 deg, Thru Hole 5mm package
BPX 38-2/3 80 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
SLOTTED OPTICAL SWITCHPHOTOLOGIC
Excelitas Tech
Detector, Thermopile TO-5 1.2 mm x 1.2 mm 20 V/W 3.8 mm
Pyroelectric Infrared Detectors - Single and Dual Channel Detectors
Infrared Emitting Diode; GaAs; 2 Amp; T-1-3/4 package; RoHS
PILLGAALAS IFRARED EMITTING DIODE
LED, Infrared; GaAs; Pill Pack. PCB solder; 935mm wavelength; RoHS
Detector, PhotoDarlington; TO-46; NPN; 90/12 deg; 15 V (Min.); 1.1 V (Max.)
Phototransistor, 2 Elements, 18deg, BPX83
TO-46GAALAS IFRARED EMITTING DIODE
PIN Photodiode, 5mm, Half Angle 10deg
TCPT1350X01 Surface Mount Slotted Optical Switch, Transistor Output
BPX 38-3 80 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
Panasonic Electronic
Panasonic
Carlo Gavazzi
SMART-DUPLINE 44X44 PIR DETECTOR 90° REV.2
NPN Silicon phototransistor; lateral; fast response; Wide field of view
LED PLASTIC T-1 WITH HIGH POWER LED CHIPBULK
Detector, PhotoDarlington; TO-46; NPN; 90 deg; 15 V; 1.1 V; 0.6 mA (Min.); 250
Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current
SLOTTED OPTICAL SWITCH PHOTOLOGIC
Lumex Opto
HP Cooled PbSe 2x2 Detector
Phototrans. array, 4 elem, +/-18deg, BPX 84
SENS OPTO SLOT 3.18MM TRANS THRU
SENSOR PHOTOLOGIC HERMETIC TO-18
Opto SFH 213 FA IR Si Photodiode, 10 deg, Through Hole 5mm package
Pepperl + Fuchs
RS Pro
Remote control for PIR handheld
Luna Optoelectronics
PLASTIC ENCAPSULATED CERAMIC PKG, TO-5
FO TO-46 DIODE IN SMA RECEPTACLE,
BPX 43-3/4 30 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
PLCC-2 PKG.PHOTODIODEEPOXYCLEARREEL
DUP OPTICAL REPEATER OUTPUT
Photoconductive Cell; 20 Kilohms (Typ.); 500 Kilohms; 0.80 (Typ.); -40 degC
SD5421-002 IR Si Photodiode, 18 deg, Through-hole TO-46
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
PHOTOTRNSISTR NPN 935NM SIDELOOK
Sensor; Photo Transistors; Surface Mount Pkg; Glass Lens; 100 nA Dark Current
LATERAL LED WITH POINT SOURCE 850 NM CHIP
Detector, PhotoDarlington; Pill Style Metal Can; NPN; 48 deg; 15 V; 1.1 V; 250
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
VISHAY
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV