Siliconix / Vishay
CNY74-2H DC Input Transistor Output Dual Optocoupler, Through Hole, 8-Pin PDIP
OSRAM Opto
PIN Photodiode, SMT, 60deg, BP104S R18R
Optek / TT Electronics
PHOTO TRANSISTOR END LOOKER
SMT refl Sensor LED Emit+Phototrans, 9202
NTE ELECTRONICS
NTE Electronics, Inc.
SENS OPTO SLOT 3.18MM TRANS THRU
Excelitas Tech
880 nm IRED lateral; 4.57x1.65 mm.; 5 mW output power; emission profile of ±25°
Silicon photodiode; hermetic TO-8; flat window; IR blocking; blue; Wide field of view
PHOTOTRANS SILICON NPN HERM TO18
PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD
Luna Optoelectronics
WIREBONDERABLE PHOTODIODE CHIPS; 1.98 X1.98MM
EATON
B/U ASSY, 1173A-100 W/9FT CABLE
SFH 309-4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package
PHOTOTRNS SILICN NPN HERMET PILL
panel mount hermetic, nm 560, a/w .37, nA 10, v 50
PHOTODARLINGTON SILICON NPN T-1
Opto SFH 309 FA-4/5 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package
Advanced Sensors
Sensor; ZTP-315 Infrared Sensor; Thermopile; IR Sensor
Photoconductive Cell; 32 Kilohms (Typ.); 1 Megohms (Min.); 0.80 (Typ.); 500 mW
PHOTO TRANSISTOR PLASTIC TO-18
INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, 850NM LED, REV. POL.
Carlo Gavazzi
DUP B&O IR RECEIVER ELKOMATIC
EMITTER IR 935NM 50MA RADIAL
VISHAY
DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
PHOTODIODE SILICON DOME TO-46
Opto BP 104 FS IR Si Photodiode, 60 deg, SMD DIP
HONEYWELL
Detector, Phototransistor; Pill Style Metal Can; NPN; 48 deg; 30 V; 0.4 V; 100
Detectors, Silicon Photodarlinton, TO-46 Metal, Glass Lensed Can, 12 Degree
PILLNPN SILICON PHOTO TRANSISTOR
Silicon photodiode; hermetic TO-46; flat window; IR blocking; blue; intermed. FOV
Photoconductive Cell, CDS
WIREBONDERABLE PHOTODIODE CHIPS; 3.6 X 3.6; MM
Smart Pyroelectric Detector; Quad; Smart DigiPyro; programmable; TO5; Large FOV
panele mount, open ceramic, 5 meg ohms, max 100v
Opto SFH 309 FA-3/4 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package
SENSOR TEMP RATIOMETRIC TO5
SLOTTED OPTICAL SWITCH PHOTOLOGIC
Detector, Silicon Phototransistor, Compact Metal Can, Coaxial Pkg, 24 Degree
PHOTOTRNS SILCN NPN HERMETC PILL
OPL550 IR Phototransistor, Through Hole3-Pin Side Looker package
PHOTO TRANSISTOR PLASTIC T-1 3/4
Detector, Phototransistor, Side-LookingPlastic Package, 50 Degree, 0.4V, 100
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV