Omron Automation
Sensor, Slot-Type, NPN, 5MM Distance, .3M Robot Cable
Carlo Gavazzi
DUPLINE PIR DETECTOR
Excelitas Tech
Small area planar silicon photodiode ina lensed; dual lead TO-46 package
OSRAM Opto
Opto BPW 34 B Full Spectrum Si Photodiode, 60 deg, Through-hole DIP
Optek / TT Electronics
PHOTO TRANSISTOR END LOOKER
Silicon photodiode; hermetic TO-46; IR blocking filter; blue enhanced; narrow FOV
NPN Silicon phototransistor; hermetic TO-46; fast response; wide field of view
SFH 310 50 IR+Visible Light Phototransistor, Through Hole 2-Pin 3mm(T-1)package
PHOTOTRANS SILICON NPN HERM TO18
SILICON PHOTODIODES
PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD
PIN Photodiode, Filter, BPW34FS R18R
Luna Optoelectronics
WIREBONDERABLE PHOTODIODE CHIPS; 1.73 X1.73MM
SFH 309-4/5 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package
PHOTOTRNS SILICN NPN HERMET PILL
SENS OPTO SLOT 3.18MM TRANS C-MT
6990034
PHOTODARLINGTON SILICON NPN T-1
Opto LB N91E-AADA-35-1, CHIPLED 1206 Series Blue LED, 476 nm 3016(1206), Dome Lens
Opto SFH 309 FA-5 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm (T-1) package
PHOTODIODE COAXIAL
880 nm IRED T-1 (5mm); 3 mW output; narrow emission profile of ±10°; GaAlAs chip
PINNED PHOTOCELL
Photoconductive Cell, Hermetically Sealed, TO-18
Advanced Sensors
Sensor; ZTP-115S Infrared Sensor; Thermopile; IR Sensor
NTE ELECTRONICS
NTE Electronics, Inc.
RS Pro
Lighting Controller Detector; PIR; Ceiling Mount; 230 Vac; 76mm Dia.
Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 muA (Typ.); 0.50 nF (Typ.)
HONEYWELL
Sensor, Phototransistor Detector, Silicon, 3.0-8.0 Light Current (mA)
Optoelectronic, Photodiode; Avalanche; 275-450 V; TO-5
PHOTO TRANSISTOR PLASTIC TO-18
INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, POINT SOURCE, 875NM LED
V9371 7W Lighting Controller Switch; Daylight; Wall Mount; 250 V
PHOTO TRANSISTOR COAXIAL W/TAB
PHOTOTRANS. W/BASE-EMITTER RES.
EMITTER IR 935NM 50MA RADIAL
VISHAY
DIODE, IR EMITTING, 30 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
Photodiode, Planar; 130 muA (Typ.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.)
PHOTODIODE PLASTIC T-1
Detector, Phototransistor; Compact Metal Can Coaxial; NPN; 24 deg; 30 V; 0.4 V
Detector, Silicon Photodarlinton, TO-46Metal, Flat Window Can, 90 Degree
PILLNPN SILICON PHOTO TRANSISTOR
PHOTOCELL
Opto SFH 3410 -3/4 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package
LAT. TM PHOTOTRANS. W/ 2M RBE SENSOR CHIP MOLDED BLACK
PHOTO TRANSISTOR FLAT LENS
Opto SFH 2430 IR + Visible Light Si Photodiode, 60 deg, SMD DIP
Silicon PIN photodiode, SMT, SFH2400
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
Siliconix / Vishay
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV