OSRAM Opto
Opto SFH 3100 F 28 deg IR Phototransistor, Thru Hole 2-Pin Side Looker package
HONEYWELL
Sensor, Phototransistor Detector, Silicon, Tape & Reel, Upright
Optek / TT Electronics
OP593B IR Phototransistor, Through Hole2-Pin TO-18 package
PHOTOTRANS SILICON NPN HERM TO18
INFRARED PHOTO DARLINGTON; 1206 PKG, WATER CLEAR LENS, FLAT
RS Pro
565 07 S 7W Lighting Controller Switch; Surface Mount; 220 V
Luna Optoelectronics
Panel Mount Hermetic Sensor
NTE ELECTRONICS
NTE Electronics, Inc.
EMITTER IR 890NM 100MA RADIAL
Excelitas Tech
Silicon photodiode; 6 mm ceramic; fast response; dark current; wide field of view
Detector; TO-46; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.; 60 ns
PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD
PHOTO TRANSISTOR COAXIAL W/TAB
PHOTODIODE 3MM PIN 935NM
PHOTOTRANS. W/BASE-EMITTER RES.
SENS OPTO SLOT 3.18MM TRANS THRU
EMITTER IR 935NM 100MA TO-46
Opto SFH 320 FA-4 TOPLED 120 deg IR Phototransistor, Smnt 2-Pin PLCC package
Carlo Gavazzi
SMART-DUPLINE PL PIR DETECTOR 90° LIGHT+LUX REV.2
WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC
Photodiode, Planar; TO-46; 450 muA (Typ.); 0.40 V (Typ.); 100 nA (Max.); -40 de
Siliconix / Vishay
IR EMITTER HIGH POWR 950NM 5MM 17DEG
PHOTODIODE SILICON PN JUNCTION
OP280 OP280 IR Emitting Diode, 890nm, PLCC 2 SMD package
PHOTOLOGIC TO-18,
Infrared Emitter, GaAs Diode, 890 nm, 0.6 mW/cm2, OP140
VISHAY
OPTOCOUPLER AC-IN 1-CH TRANS W/BASE DC-OUT 6-PIN PDIP
OP644SL Phototransistor 2-Pin Pill package
IR EMITTER HIGH POWR 950NM 5MM 22DEG
Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC
PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46
PIN Photodiode DIL2 no filter, BPW34
Diode, Infrared Emitter, Metal Package, 90 Degree, 4.8 Power Output (mW)
Opto KOM 2125 IR + Visible Light Si Photodiode, 60 deg, SMD DIP
PILLNPN SILICON PHOTO TRANSISTOR
PHOTOCELL
Opto SFH 235 FA IR Si Photodiode, 65 deg, Through Hole 5mm package
Opto SFH 3600 MIDLED 40 deg IR + Visible Light Phototransistor, Smnt 2-Pin
EMITTER IR 935NM 50MA RADIAL
VSMG10850 Infrared Emitting Diode, 850nm, Side-Looking SMD package
LAT. TM PHOTOTRANS. W/ 2M RBE SENSOR CHIP MOLDED BLACK
INFRARED PHOTO DARLINGTON ; 0805 PKG, BLACK LENS, FLAT
PHOTO TRANSISTOR PLASTIC T-1
PHOTOTRANS SILICON NPN SIDE LOOK
Opto SFH 2500 FA IR Si Photodiode, 15 deg, SMD SMR
PHOTOLOGIC LATERAL,
Photocell; 20 M (Min.); 550 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60
SFH320FA IR phototransistor
AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 550NM 2-PIN SMD T/R
Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA (Cont.); -55 de
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV