Excelitas Tech
Pyroelectric Infrared Detectors - Dual Element Detectors
Advanced Sensors
Sensor; ZTP-115M Infrared Sensor; Thermopile; IR Sensor
OSRAM Opto
Phototransistor, SMT MIDLED, 20deg, SFH3600
HONEYWELL
HFD3065-002/BBA PIN diode, 5nA 50Vr 950nm
Siliconix / Vishay
TSHG8200 IR LED, 830nm, T-1 3/4 (5mm) Through Hole package
Optek / TT Electronics
Sensor, Hall Effect, 5 to 12V, Board Mount, 25 mA
PHOTOLOGIC LATERAL,
Infrared Emitting Diode; GaAlAs Flat Lens; 935nm; 104deg beam; RoHS
PHOTOTRANS. W/BASE-EMITTER RES.
Opto SFH 3015 FA 13 deg Visible Light Phototransistor, Smnt Side Looker package
LED PLASTIC TO-46 WITH HIGH POWERE LED CHIPBULK
SIX ELEMENT SMD PHOTODIODE ARRAY,
Infrared Emitter, GaAs Diode, 935 nm, 0.4 mW/cm2, Side Looking THD
INFRARED PHOTO DARLINGTON ; PLCC-2 PKG, CLEAR, EPOXY
EMITTER IR 935NM 50MA RADIAL
Luna Optoelectronics
PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)
PHOTO TRANSISTOR PLASTIC T-1
Lumex Opto
Ambient PbS 1x1 Detector
PHOTOTRANSISTOR LATERAL DARK PACKAGE
Opto SFH2505 IR + Visible Light Si Photodiode, 15 deg, Through-hole SMR
Carlo Gavazzi
DUP PIR DETECTOR CEILING OPUS
Phototransistor; Compact Metal Can Coaxial Package; NPN; 0.4 V (Sat.); 100 nA
ULTRAVIOLET METAL CAN LED - 380NM
Phototransistor, SMT with lens, SFH3219
PIN PHOTODIODE LOW PROFILE ST,
ULTRAVIOLET METAL CAN LED - 390NM
Photodiode, Planar; TO-46; 70 muA (Typ.); 0.40 V (Typ.); 1 nA (Max.); -40 degC
AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP 570NM 2-PIN T-1
PIN PHOTODIODE COND. PLASTIC ST,
Diode, Infrared Emitter; Metal Can Coaxial; 880 nm; 1.8 V; 20 mA; -55 degC; 75
ULTRAVIOLET METAL CAN LED - 400NM
PHOTODARL SILICON NPN SIDE LOOK
Opto BPW 34 BS Full Spectrum Si Photodiode, 60 deg, SMD DIP
PHOTO TRANSISTOR END LOOKER
TO-18NPN SILICON PHOTO TRANSISTOR
INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, 940NM LED
4N38 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
SLOTTED OPTICAL SWITCH PHOTOLOGIC
Diode, Infrared Emitter; TO-46 Metal Can; 935 nm; 1.7 V; 100 mA; -55 degC; 125
Opto BPX 81 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package
SENSOR PHOTOLOGIC HERMETIC TO-18
Opto SFH 310 FA 50 deg IR Phototransistor, Through Hole 2-Pin 3mm (T-1) package
PHOTOTRANS SILICON NPN HERM TO18
EMITTER IR 890NM 100MA RADIAL
Silicon photodiode; lateral; fast response; dark current; wide field of vision
ULTRAVIOLET METAL CAN LED - 415NM
PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATSHELL
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
VISHAY
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV