Luna Optoelectronics
WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC
Optek / TT Electronics
SENS OPTO SLOT 3.18MM TRANS THRU
SENSOR PHOTOLOGIC SIDE LOOKING
PHOTOLOGIC LATERAL,
SLOTTED OPTICAL SWITCHPHOTOLOGIC
HI POWER OUTHI SPEEDTO-46 FLAT LENS
Siliconix / Vishay
IR EMITTER HIGH POWR 950NM 5MM 30DEG
PHOTODARLINGTON NPN 890NM TO-18
WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, SMD PACKAGES
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 1000 Kilohms (Min.); 690 nm
TO-18NPN SILICON PHOTO TRANSISTOR
SLOTTED OPTICAL SWITCH PHOTOLOGIC
PHOTOLOGIC TO-18,
EMITTER IR 890NM 50MA RADIAL
Carlo Gavazzi
SMART-DUPLINE 55X55 PIR DETECTOR 150° REV.6
HONEYWELL
Sensor, Photodiode Dectetor, Silicon, Bulk Pack
PHOTOTRANS. W/BASE-EMITTER RES.
Infrared Emitter, GaAs Diode, 890 nm, 2.7 mW/cm2, T1 (3 mm)
OSRAM Opto
Phototransistor 5mm 3pin, SFH 303 FA-3/4
S.M. LARGE AREA PHOTODIODE,
PHOTOTRANSISTOR NPN 890NM TO-18
Photoconductive Cell, Hermetically Sealed, TO-8
PHOTODIODE VERSIONOPB610
SMART-DUPLINE 44X44 PIR DETECTOR 150° REV.6
NTE ELECTRONICS
NTE Electronics, Inc.
RS Pro
Ceiling PIR Detector Detector; PIR; FlushMount; 220 - 240 V; 76mm Dia.
PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46
EMITTER IR 935NM 50MA RADIAL
BP 103 110 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)
Photo Diode, Planar; 1.2 mA (Typ.); 0.40 V (Typ.); 3.3 muA (Max.); 0.7 nF (Typ.)
EATON
B/U ASSY, 1273A-300 W/9 CABLE
PHOTO TRANSISTOR PLASTIC T-1
Si PIN photodiode, DIP, 120deg, filt, BPW34F
LED IRLED 850NM 2-PIN TO-46
Emitter, Infrared Diode, Side-Looking Plastic Pkg, 10 Degree, 20mA Forward Cur.
SMART-DUPLINE PL PIR DETECTOR 90° LIGHTREV.2
Lumex Opto
HP Cooled PbS 3x3 Detector
PHOTOCONDUCTIVE CELL, TO-8P PKG, 250 VOLTAGE OHMS
PHOTOTRANSISTOR LATERAL DARK PACKAGE
Opto SFH 2701 IR + Visible Light Photodiode, 60 deg, SMD Chip LED
Opto SFH 325-3 120deg IR + Visible Light Phototransistor, Smnt 2-Pin PLCC
PILLNPN SILICON PHOTO TRANSISTOR
Excelitas Tech
Photoconductive Cell; 8 Kilohms (Typ.); 200 Kilohms (Min.); 0.75 (Typ.); TO-8
Phototrans. array, 9 elem, +/-18deg, BPX 89
Phototransistor, 5mm, SFH 314
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
VISHAY
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV