Optek / TT Electronics
PILLGAALAS IFRARED EMITTING DIODE
EMITTER IR 935NM 100MA TO-46
HONEYWELL
SD 3443-002 90 deg Phototransistor, Through Hole 3-Pin TO-46 package
Excelitas Tech
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Photodiode; 925nm (typ.); 0.6A/W; drk cur 40nA
NTE ELECTRONICS
NTE Electronics, Inc.
EMITTER IR 890NM 50MA T-1
LED PLASTIC T-1 WITH HIGH POWER LED CHIPBULK
Diode, Infrared Emitter, T-1 Pkg, 15 Degree, 20 mA Forward Current
Lumex Opto
Cooled PbSe 2x2 Detector
OPL810 IR Phototransistor, Through Hole3-Pin TO-18 package
Luna Optoelectronics
Photodiode, Planar; Clear Epoxy Dome Package; 700 muA (Typ.); 0.40 V (Typ.)
PIN DIODE TO-18,
PHOTODIODE SILICON PIN TO-18
Carlo Gavazzi
DUP OPTICAL REPEATER OUTPUT MODULE
RS Pro
Lighting Controller Detector; PIR; Ceiling Mount; 230 Vac; 76mm Dia.
PHOTOTRNSISTR NPN 935NM SIDELOOK
OSRAM Opto
Opto SFH 203 IR + Visible Light Si Photodiode, 20 deg, Through Hole 5mm package
White-Rodgers
Fan Relay, Type 84, 115/120VAC coil, SPDT
slotted optical switch HOA0961-T51
SLOTTED OPTICAL SWITCH PHOTOLOGIC
Opto SFH 3211 FA TOPLED 120 deg IR Phototransistor, Surface Mount 2-Pin
Opto SFH 300 FA 50 deg IR Phototransistor, Thru Hole 2-Pin 5mm(T-1 3/4)package
Phototransistor, 3mm, Half Angle 25deg
PHOTODARL SILICON NPN SIDE LOOK
EMITTER IR 890NM 100MA RADIAL
PHOTOTRANS SILICON NPN HERM TO18
SD5491-005 12 deg Phototransistor, Through Hole 3-Pin TO-18 package
INFRARED PHOTO DARLINGTON ; 1206 PKG, BLACK LENS, FLAT
SFH 3310 150 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package
PHOTO TRANSISTOR PLASTIC T-1
PILLNPN SILICON PHOTO TRANSISTOR
Thermopile with integrated signal processing circuit
IR TO18 PIN Photodiode 80°, BPX65
IR T-1¾ Phototransistor 80°, SFH314FA-2/3
DigiPyro; Dual-Element Pyroelectric Detector; TO5; for motion sensing; large FOV
Sensor, Hall Effect, Ceramic, Single Pole, 4.5 to 24V, 25 mA
Opto SFH 3605 MIDLED 40 deg IR + Visible Light Phototransistor, Smnt 2-Pin
VISHAY
DIODE, IR EMITTING, 30 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD
PHOTO TRANSISTOR COAXIAL
OPTICAL INTERRUPTER, SIDE LOOKER, TRANSISTOR, BULK
PHOTOTRANS. W/BASE-EMITTER RES.
EMITTER IR 890NM 50MA RADIAL
SFH 320-3 TOPLED 120 IR+Visible Light Phototransistor, Smnt 2-Pin PLCC package
SMART-DUPLINE PIR DETECTOR 360° REV.2
SMART-DUPLINE PIR DETECTOR 90° LIGHT+LUX REV.2
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
Siliconix / Vishay
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV