OSRAM Opto
PIN Photodiode, Filter, BPW34FAS R18R
Optek / TT Electronics
PHOTO DARLINGTON NPN 15V 850NM
Opto SFH 3710-3/4 120 deg Full SpectrumPhototransistor, Surface Mount 2-Pin
PHOTODIODE COAXIAL W/TAB
Excelitas Tech
EMITTER, IR, LATERAL
Dual-Element Pyroelectric Detector; TO39; Automatic light switching; Large FOV
SENS OPTO SLOT 3.18MM TRANS THRU
HONEYWELL
Sensor, Phototransistor Detector, Silicon, Tape & Reel, Inverted
RS Pro
180 deg PIR Light Controller Sensor Switch; Daylight; Wall Mount; 220 - 240 Vac
PHOTO TRANSISTOR COAXIAL W/TAB
Opto SFH 3410 -1/2 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package
LAT. TM PHOTOTRANS. W/ 2M RBE SENSOR CHIP MOLDED BLACK
PHOTO TRANSISTOR FLAT LENS
PIN Photodiode, Fast Switch, reverse
IR Si PIN photodiode, SMT, SFH2400FA
Diode, Infrared Emitter; Metal Pill Style; 880 nm; 1.8 V; 75 mA; -55 degC; 125
Silicon photodiode; lateral; fast response; low dark current; wide field of view
Opto BP 104 S IR + Visible Light Si Photodiode, 60 deg, SMD DIP
PHOTO TRANSISTOR COAXIAL
NTE ELECTRONICS
NTE Electronics, Inc.
PHOTOTRANS SILICON NPN HERM TO18
PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD
SFH 309-3/4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package
HERMETIC PHOTOCELL
Advanced Sensors
Sensor; ZTP-135L Infrared Sensor; Thermopile; IR Sensor
INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, HI-PWR 850NM LED
EMITTER IR 935NM 50MA RADIAL
PHOTODIODE SILICON FLAT TO-46
PIN Photodiode, SMT, 60deg, filt, BP104FAS
Photoconductive Cell; 24 Kilohms (Typ.); 500 Kilohms; 0.80 (Typ.); -40 degC
Luna Optoelectronics
PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)
VISHAY
DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
Smart Pyroelectric Detector; Dual-Element; Smart DigiPyro; fully programmable; TO5
PHOTODARL SILCN NPN FLAT SD LOOK
Opto SFH 309 FA 24 deg IR Phototransistor, Through Hole 2-Pin 3mm (T-1) package
PHOTOLOGIC SLOTTED OPTICAL SWITCH
Siliconix / Vishay
TSSP77P38TT, 38kHz IR Detector, 940nm +/-50deg, 40m Range, 2.5V - 5V, SMT, 6.8x3x3.2mm
PHOTODIODE PLASTIC T 1-3/4
Photodiode, Solderable Planar; 1.4 mA (Min.); 0.40 V (Typ.); 5 uA (Max.)
PHOTOTRNS SILICN NPN HERMET PILL
PHOTO TRANSISTOR PLASTIC T-1 3/4
Detector, Phototransistor; T-1; NPN; 18deg; 30 V; 0.4 V; 17.5 mA (Max.); 100 n
SURFACE MOUNT PHOTO TRANSISTOR,
Phototransistor, Silicon, TO-18 Metal Can
Pyroelectric Infrared Detectors - Single and Dual Channel Detectors
OP240C IR LED, 890nm, Side Looker Through Hole package
Opto SFH 205 FA IR Si Photodiode, 60 deg, Through Hole 5mm package
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV