Siliconix / Vishay
BPW85 +/-25 IR+Visible Light Phototransistor, Through Hole 2-Pin 3mm(T-1)package
Optek / TT Electronics
PHOTOTRNS SILCN NPN HERMETC PILL
PHOTODIODE QUAD HIGH TEMP SMD
Excelitas Tech
Pyroelectric Infrared Detectors - Dual Element Detectors
Photointerrupter Reflective Phototransi
OSRAM Opto
BPX 81-2/3 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package
Carlo Gavazzi
SMART-DUPLINE INDOOR PIR SENSOR REV.2
PHOTOLOGIC LATERAL,
NPN Silicon phototransistor; lateral; fast response; Wide field of view
PHOTOLOGIC TO-18,
BPY 62-4 16 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
NTE ELECTRONICS
NTE Electronics, Inc.
Opto SFH 310 FA-2/3 50 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package
PHOTOTRANS SILICON NPN HERM TO18
EMITTER IR 890NM 100MA RADIAL
Planar silicon photodiode; two lead ceramic; coated with thick layer clear epoxy
ULTRAVIOLET METAL CAN LED - 425NM
PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD
OMRON ELECTRONIC
EE-SX3081 Through Hole Slotted Optical Switch, Phototransistor Output
Opto SFH 320 FA-3/4 TOPLED 120 deg IR Phototransistor, Smnt 2-Pin PLCC package
EMITTER IR 890NM 50MA RADIAL
OP802WSL Phototransistor, Through Hole 3-Pin TO-18 package
Luna Optoelectronics
PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC
Photoconductive Cell, Hermetically Sealed Pkg, TO-5
SENSOR PHOTOLOGIC HERMETIC TO-18
SENS OPTO SLOT 9.53MM TRANS C-MT
Infrared Emitter, GaAs Diode, 890 nm, 5mW/cm2, TO-46
Photodiode; 150 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC
PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46
BPW21 visible light photodiode
WIREBONDERABLE PHOTODIODE CHIPS; 1.00 X1.00MM
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
HARTING
Ha-Vis Smart Patch Cable Detector
Opto SFH 229 FA IR Si Photodiode, +/-17deg, Through Hole 3mm package
EMITTER IR 935NM 50MA RADIAL
OP132 OP130 Infrared Emitting Diode, 935nm, TO-46 Through Hole package
INFRARED PHOTO DARLINGTON ; 0805 PKG, WATER CLEAR LENS, FLAT
EMITTER IR 935NM 50MA T-1
PHOTOTRNS NPN PLASTIC SIDE LOOK
PIN DIODE TO-46,
SMART-DUPLINE 44X44 PIR DETECTOR 90°+LUX REV.2
EATON
B/U ASSY, 1273A-100 W/9FT CABLE
Opto BPX 61 IR + Visible Light Si Photodiode, 55 deg, Through-hole TO-5
Advanced Sensors
Sensor; ZTP-135SR-F1 Infrared Sensor; Thermopile; IR Sensor
SFH 309-5/6 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package
Large area planar silicon; two lead ceramic; coated with a layer of clear epoxy
SENS OPTO SLOT 3.18MM TRANS THRU
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
VISHAY
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Omron Automation
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
HONEYWELL
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
PHOTOCELL
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV